c opyright ? ruichips semiconductor co . , ltd rev. e ? mar ., 20 1 3 www. ruichips .com ru 190n08 s n - channel advanced power mosfet features pin description n - channel mosfe t symbol parameter rating unit common ratings (t a =25c unless otherwise noted) v dss drain - source voltage 80 v v gss gate - source voltage 25 t j maximum junction temperature 175 c t stg storage temperature ra nge - 55 to 175 c i s diode continuous forward current t c =25c 190 a mounted on large heat sink i dp 300 s pulsed drain current tested t c = 25 c 700 a i d continue drain current t c =25c 190 t c = 100 c 140 p d maximum power dissipation t c =25c 312 w t c = 100 c 156 r jc thermal resistance - junction to case 0.48 c/w drain - source avalanche ratings e as avalanche energy , single pulsed 1225 mj absolute maximum ratings 80v/ 1 90 a r ds (on) = 3.9 m ? (typ.) @ v gs = 10v avalanche rated reliable and rugged lead free and green devices available applications automotive applications and a wide variety of other applications high efficiency synchronous in smps high speed power switch ing to - 263
c opyright ? ruichips semicondu ctor co . , ltd rev. e ? mar ., 201 3 2 www. ruichips .com ru190n08 s electrical characteristics (t a =25 c unless otherwise noted) symbol parameter test condition ru190n08 s unit min. typ. max. static characteristics bv dss drai n - source breakdown voltage v gs =0v, i ds =250 a 80 v i dss zero gate voltage drain current v ds = 8 0 v, v gs =0v 1 a t j =85 c 30 v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 100 n a r ds (on) drain - source on - state resistance v gs = 10 v, i ds = 40 a 3.9 4.8 m ? notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. pulse width limited by safe operating area. limited by t jmax , i as = 5 0 a, v dd = 48v, r g = 47 , starting t j = 25c . pulse test ; p ulse width 3 00 s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 40 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 40 a, dl sd /dt=100a/ s 68 ns q rr reverse recovery charge 130 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.0 ? c iss input capacitance v gs =0v, v ds = 30 v, frequency=1.0mhz 6800 pf c oss output capacitance 1100 c rss reverse transfer capacitance 490 t d(on) turn - on delay time v dd = 35 v, r l = 35 ? , i ds = 1a, v gen = 10v, r g =6 ? 3 8 ns t r turn - on rise time 2 2 t d(off) turn - off delay time 120 t f turn - off fall time 7 5 gate charge characteristics q g total gate charge v ds = 30 v, v gs = 10v, i ds = 40 a 155 nc q gs gate - source charge 4 5 q gd gate - drain charge 48
c opyright ? ruichips semicondu ctor co . , ltd rev. e ? mar ., 201 3 3 www. ruichips .com ru190n08 s typical characteristics power dissipation drain current ptot - power (w) i d - drain current ( a) tj - junction temperature (c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration (sec)
c opyright ? ruichips semicondu ctor co . , ltd rev. e ? mar ., 201 3 4 www. ruichips .com ru190n08 s typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage rds(on) - on - resistance (mw) normalized threshold vlotage v gs - gate - source voltage (v) tj - junction temperature (c)
c opyright ? ruichips semicondu ctor co . , ltd rev. e ? mar ., 201 3 5 www. ruichips .com ru190n08 s typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction t emperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ? ruichips semicondu ctor co . , ltd rev. e ? mar ., 201 3 6 www. ruichips .com ru190n08 s avalanche t est circuit and waveforms switching time test circuit and waveforms
c opyright ? ruichips semicondu ctor co . , ltd rev. e ? mar ., 201 3 7 www. ruichips .com ru190n08 s ordering and marking information device marking package packaging quantity reel size tape width ru 190n08 s ru190n08 s to - 263 tube 50 - - ru 190n08 s - r ru190n08 s to - 263 tape&reel 800 13?? 24mm
c opyright ? ruichips semicondu ctor co . , ltd rev. e ? mar ., 201 3 8 www. ruichips .com ru190n08 s package information to - 263- 2l all dimensions refer to jedec standard do not include mold flash or protrusions symbol mm inch symbol mm inch min nom max min nom max min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0. 25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 1 5.50 0.579 0.594 0.610
c opyright ? ruichips semicondu ctor co . , ltd rev. e ? mar ., 201 3 9 www. ruichips .com ru190n08 s customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: (86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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